Antimonide devices extend the spectrum
نویسندگان
چکیده
منابع مشابه
Antimonide-based compound semiconductors for electronic devices: A review
Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrowbandgap Sb-based devices over conventional GaAsor InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HE...
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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
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A 32x32 Sb-based Geiger-mode (GM) avalanche photodiode array, operating at 2 μm with three-dimensional imaging capability, is presented. The array is interfaced with a ROIC (readout integrated circuit) in which each pixel can detect a photon and record the arrival time. The hybridized unit for the 1000-element focal plane array, when operated at 77K with 1 V overbias range, shows an average dar...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2004
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(04)00360-6